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| Transys Electronics LIMITED TO-220 Plastic-Encapsulated Transistors 3DD13003 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-220 1. BASE 1.5 W (Tamb=25) 2. COLLECTOR 3. EMITTER Collector current 1.5 A ICM: Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) VBE fT tf ts VCE= 10V, IC= 0.5 mA 123 unless otherwise specified) Test conditions MIN 700 400 9 1000 500 1000 8 5 1 1.2 3 5 0.5 2.5 V V V MHZ S S 40 TYP MAX UNIT V V V A A A Ic= 1000A, IE=0 Ic= 10mA, IB=0 IE= 1000A, IC=0 VCB= 700V, IE=0 VCE= 400V, IB=0 VEB= 9V, IC=0 VCE= 2V, IC= 0.5 A IC=1000mA, IB=250 mA IC=1000mA, IB= 250mA IE= 2000 mA Ic=100mA, VCE=10V f=1MHZ Vcc=100V, Ic=1A IB1=-IB2=0.2A CLASSIFICATION OF hFE(1) Rank Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40 |
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